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November 2013
SGP10N60RUFD
600 V, 10 A Short Circuit Rated IGBT
General Description
Features
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
Uninterrupted Power Supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
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10 A, 600 V, T C = 100°C
Low Saturation Voltage: V CE (sat) = 2.1 V @ I C = 10 A
Typical Fall Time. . . . . . . . . .242ns at T J = 125°C
High Speed Switching
High Input Impedance
Short Circuit Rating
Applications
Motor Control, UPS, General Inverter
C
G
GCE
TO-220
E
Absolute Maximum Ratings
T C = 25 ? C unless otherwise noted
Symbol
Description
Ratings
Unit
V CES
V GES
I C
I CM (1)
I F
I FM
T SC
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ? C
@ T C = 100 ? C
@ T C = 25 ? C
@ T C = 100 ? C
@ T C = 100 ? C
@ T C = 25 ? C
@ T C = 100 ? C
600
? 20
16
10
30
24
12
92
10
75
30
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
A
us
W
W
? C
? C
? C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R ? JC (IGBT)
R ? JC (DIODE)
R ? JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
1.6
2.5
62.5
Unit
? C / W
? C / W
? C / W
?1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
1
www.fairchildsemi.com
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